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mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES
Recently imlemented writing support has shown that current num of retries is too low. Writing requires longer waiting than simple reading. Signed-off-by: Rafał Miłecki <zajec5@gmail.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
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#include "bcm47xxnflash.h"
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/* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has
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* shown 164 retries as maxiumum. */
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#define NFLASH_READY_RETRIES 1000
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* shown ~1000 retries as maxiumum. */
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#define NFLASH_READY_RETRIES 10000
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#define NFLASH_SECTOR_SIZE 512
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